A magnetically isolated gate driver for high-speed voltage sharing in series-connected MOSFETs

Author

Anthony, Philip ; McNeill, Neville ; Holliday, Derrick ; Grant, D. ; Hearn, G.

Author_Institution

Univ. of Bristol, Bristol, UK

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

10

Abstract

A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads. Galvanic isolation is provided by a loop of high voltage wire, which also serves as the resonant inductor in the circuit. Fast dynamic voltage sharing is achieved by delivering equal current to each gate. A prototype is built and tested, demonstrating a 75ns switching time at 5kV using 900V MOSFETs.

Keywords

driver circuits; field effect transistor switches; inductors; isolation technology; load (electric); power MOSFET; resonant invertors; capacitive loads; dynamic voltage sharing; galvanic isolation; magnetically isolated gate driver; resistive loads; resonant inductor; scalable resonant gate drive circuit; series connected MOSFET; time 75 ns; voltage 5 kV; voltage 900 V; Capacitance; Inductance; Logic gates; MOSFETs; Optical switches; Wires; Device application; High voltage power converters; Insulation; MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020347