Title :
Failure modes and robustness of SiC JFET transistors under current limiting operations
Author :
Bouarroudj-Berkani, M. ; Lefebvre, Serge ; Othman, D. ; Sabrine, S.M. ; Khatir, Z. ; Salah, T.B.
Author_Institution :
CNAM, SATIE ENS CACHAN, Cachan, France
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
The paper presents results of ageing tests of normally-on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit modes corresponding to current limitation operations. Experimental tests are detailed and the evolution during tests of ageing indicators like on-state resistance and saturation current are discussed. Finally, thermal simulation results are presented in order to understand and explain evolutions of some ageing indicators.
Keywords :
ageing; fault current limiters; junction gate field effect transistors; power field effect transistors; semiconductor device testing; short-circuit currents; silicon compounds; SiC; SiC JFET prototype transistor; SiC JFET transistor; ageing indicator; ageing test; current limiting operation; failure mode; on-state resistance; saturation current; short circuit mode; thermal simulation; Aging; JFETs; Junctions; Logic gates; Resistance; Silicon carbide; Current limiter; JFET; Power semiconductor; Robustness; Short circuit; Silicon Carbide;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
