Title :
Evaluation of inherent elements in a SiC power MOSFET by its equivalent circuit
Author :
Phankong, Nathabhat ; Yanagi, Takashi ; Hikihara, Takashi
Author_Institution :
Dept. of Electr. Eng., Rajamangala Univ. of Technol. Thanyaburi, Thanyaburi, Thailand
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
Device parasitics or inherent elements in a power MOSFET limit and affect its switching behavior. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, an equivalent circuit for SiC power MOSFET is proposed with taking the physical structure into account and evaluating the inherent elements.
Keywords :
equivalent circuits; power MOSFET; silicon compounds; SiC; device parasitics; equivalent circuit; inherent element evaluation; physical structure; power MOSFET limit; Capacitance; Power MOSFET; Power measurement; Semiconductor device measurement; Silicon; Silicon carbide; Device characterization; MOSFET; Modeling; Power semiconductor device; Silicon Carbide (SiC);
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
