DocumentCode
553537
Title
Evaluation of inherent elements in a SiC power MOSFET by its equivalent circuit
Author
Phankong, Nathabhat ; Yanagi, Takashi ; Hikihara, Takashi
Author_Institution
Dept. of Electr. Eng., Rajamangala Univ. of Technol. Thanyaburi, Thanyaburi, Thailand
fYear
2011
fDate
Aug. 30 2011-Sept. 1 2011
Firstpage
1
Lastpage
8
Abstract
Device parasitics or inherent elements in a power MOSFET limit and affect its switching behavior. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, an equivalent circuit for SiC power MOSFET is proposed with taking the physical structure into account and evaluating the inherent elements.
Keywords
equivalent circuits; power MOSFET; silicon compounds; SiC; device parasitics; equivalent circuit; inherent element evaluation; physical structure; power MOSFET limit; Capacitance; Power MOSFET; Power measurement; Semiconductor device measurement; Silicon; Silicon carbide; Device characterization; MOSFET; Modeling; Power semiconductor device; Silicon Carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location
Birmingham
Print_ISBN
978-1-61284-167-0
Electronic_ISBN
978-90-75815-15-3
Type
conf
Filename
6020396
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