• DocumentCode
    553561
  • Title

    Demonstration of 25 W/cm3 class all-SiC three phase inverter

  • Author

    Takao, Kazuto ; Shinohe, Takashi

  • Author_Institution
    Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2011
  • fDate
    Aug. 30 2011-Sept. 1 2011
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Silicon-carbide power devices are expected as next generation power devices due to their superior performances. This paper focuses on a performance evaluation of an all-SiC power converter in terms of high power density. A forced air-cooling type all-SiC three phase inverter has been built with currently available normally-on SiC-JFETs and SiC-SBDs and the feasible power density has been derived. The inverter consists of an all-SiC module, heat sink, cooling fans, dc-link capacitor bank, and gate drive unit. The volume of the inverter is 864 cm3. The power loss of the all-SiC module is measured in continuous operation tests. The experimental results and theoretical loss calculations show that high power density of 25 W/cm3 could be achieved.
  • Keywords
    Schottky diodes; cooling; heat sinks; invertors; junction gate field effect transistors; silicon compounds; JFET; SBD; Schottky barrier diodes; SiC; air-cooling type; cooling fans; dc-link capacitor bank; gate drive; heat sink; high power density; next generation power devices; three phase inverter; Capacitors; Current measurement; Heat sinks; Inverters; Logic gates; Silicon carbide; Temperature measurement; High power density systems; JFET; Power semiconductor device; Schottky diode; Silicon Carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
  • Conference_Location
    Birmingham
  • Print_ISBN
    978-1-61284-167-0
  • Electronic_ISBN
    978-90-75815-15-3
  • Type

    conf

  • Filename
    6020420