Comparison of press-pack IGBT at hard switching and clamp operation for medium voltage converters

Author

Alvarez, R. ; Filsecker, Felipe ; Bernet, Steffen

Author_Institution

Tech. Univ. Dresden, Dresden, Germany

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

7

Abstract

The newly developed press-pack IGBT devices compete with IGCTs in high power industrial applications. These new semiconductors were already studied in detail for hard switching and for clamp operation. Nevertheless, a comparison of the basic switching characteristics of the IGBT press-pack devices for hard switching and clamp operation has not been done so far. This paper compares the switching behavior, the switching losses and the safe operating area trajectories of the new 85 mm, 4.5 kV, 1.2 kA press-pack SPT⁺ IGBT for hard switching and clamp operation. The methods used for the experimental characterization and comparison are explained in detail.

Keywords

clamps; losses; power semiconductor switches; switching convertors; IGCT; clamp operation; current 1.2 kA; hard switching; industrial application; medium voltage converters; press pack IGBT devices; size 85 mm; switching losses; voltage 4.5 kV; Clamps; Inductance; Insulated gate bipolar transistors; Semiconductor diodes; Stress; Switches; Switching loss; Device application; Device characterization; IGBT; Industrial application; Packaging; Test bench;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020451