Title :
Simulation and analysis of low-resistance AlGaN/GaN HFET power switches
Author :
Reiner, R. ; Benkhelifa, Fouad ; Krausse, D. ; Quay, Ruediger ; Ambacher, Oliver
Author_Institution :
IAF, Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
AlGaN/GaN HFETs yield excellent properties for highly-efficient power-switching devices. A key parameter of highly-efficient switches is the static on-state resistance of the transistor. This paper discusses the main parameters affecting the on-state resistance and in particular the influence of resistive metallization in lateral finger structures and large-area comb structures. Current crowding effects for finger structures are analytically analyzed and compared. Equations are developed and applied in practical examples and verified by two-dimensional finite element simulations. For lateral large-area comb structures different bond configurations are investigated. Furthermore, the two-dimensional simulations method has been applied on real structure layouts of a large-area power switch and the result of this simulation is compared to measurement results.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power semiconductor switches; wide band gap semiconductors; AlGaN-GaN; large-area comb structures; lateral finger structures; low-resistance HFET power switches; resistive metallization; static on-state resistance; transistor; two-dimensional finite element simulations; Equations; Fingers; Logic gates; Mathematical model; Metallization; Resistance; Transistors; Current Crowding; Finger Structure; Lateral Power Transistors; On-Resistance; Tapered Metallization;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
