Title :
Perspectives of high-voltage SiC-semiconductors in high power conversion systems for wind and photovoltaic sources
Author :
Araujo, Samuel Vasconcelos ; Zacharias, Peter
Author_Institution :
KDEE (Centre of Competence for Distrib. Electr. Power Technol.), Univ. Kassel, Kassel, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
SiC devices become increasingly interesting at higher blocking voltages against their Si-based counterparts in order to reduce losses and obtain cost savings by means of higher switching frequency and low component count. The possible gains along with an overview of related constraints valid at high power levels will be discussed in this publication, taking as example power conversion nstages for photovoltaic and wind energy systems.
Keywords :
photovoltaic power systems; power convertors; silicon compounds; wide band gap semiconductors; wind power plants; SiC; cost savings; high power conversion systems; high-voltage semiconductors; loss reduction; photovoltaic energy systems; photovoltaic sources; wind energy systems; wind sources; Inverters; Logic gates; MOSFETs; Silicon; Silicon carbide; Switches; Temperature measurement; High Voltage Power Converters; Photovoltaic; Renewable energy systems; Silicon Carbide; Wind Energy;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
