Title :
A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs
Author :
Mudholkar, Mihir ; Saadeh, M. ; Mantooth, Homer Alan
Author_Institution :
3175 Bell Eng. Center, Univ. of Arkansas, Fayetteville, AR, USA
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
A compact model for SiC Power MOSFETs has been presented. The model has been validated with measurements from commercially available 1200V, 20A SiC power MOSFETs. The model features temperature scaling from 25°C to 225°C, which is the operating temperature for the new devices. In order to improve the user´s experience with the model, a new datasheet driven parameter extraction strategy has been proposed. The parameter extraction strategy requires only the data normally given in device datasheets, so off-the-shelf devices can characterized quickly. The model includes charge conserving expressions for all non-linear capacitances of the power MOSFET. The SiC power MOSFET shows excellent performance over elevated temperatures, with small variation in on-state resistance over temperature.
Keywords :
electric resistance; power MOSFET; semiconductor device models; silicon compounds; SiC; datasheet driven power MOSFET; nonlinear capacitances; on state resistance; parameter extraction; temperature scaling; voltage 1200 V; Capacitance; Equations; Logic gates; Mathematical model; Power MOSFET; Silicon carbide; Device modeling; MOSFET; device characterisation; device simulation; silicon carbide (SiC);
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
