Title :
A new approach to higher density rectifier with SiC power devices for 380 V DC distribution systems
Author :
Hayashi, Yasuhiro ; Mino, Masayuki
Author_Institution :
NTT Facilities, Inc., Tokyo, Japan
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
A new approach has been proposed for creating higher power density 200Vac / 380Vdc converters to be installed in 380 V DC distribution systems. This approach requires a high density 3-Phase PWM converter. A SiC-JFETs and SiC-SBDs pair is attractive because of its low conduction loss created by a synchronous rectification and low switching loss by using uni-polar power devices. A design has already been proposed and experimentally verified. The feasibility has been proven by comparing it with the existing power unit for 380 V DC distribution systems.
Keywords :
junction gate field effect transistors; rectifiers; silicon compounds; DC distribution systems; JFET; SiC; higher density rectifier; higher power density; switching loss; synchronous rectification; unipolar power devices; voltage 380 V; Capacitors; DC-DC power converters; Power generation; Power supplies; Pulse width modulation converters; Semiconductor diodes; Silicon carbide; DC Power Supply; Design; High Power Density System; Silicon Carbide;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
