Temperature adaptive IGBT gate-driver design

Author

Wu, Tsai-Fu ; Castellazzi, Alberto

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Nottingham, UK

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

6

Abstract

This paper is about the development of a temperature-dependent driving strategy for a 3.3 kV-1200 A planar-gate non-punch-through (NPT) insulated-gate-bipolar-transistor (IGBT) power module. In particular, the proposed strategy aims at counterbalancing the effect of variations in ambient temperature on the power losses of the semiconductor devices by regulating the amplitude of the applied gate-emitter drive signal correspondingly. The concept is developed with the help of accurate simulation models and is then demonstrated experimentally. Although not yet optimized, the validity of the proposed solution in well demonstrated by the results presented.

Keywords

driver circuits; insulated gate bipolar transistors; losses; power semiconductor devices; temperature; IGBT gate driver; ambient temperature; current 1200 A; gate emitter drive signal; insulated gate bipolar transistor; nonpunch through; power losses; semiconductor devices; temperature dependent driving strategy; voltage 3.3 kV; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Temperature; Temperature measurement; Temperature sensors; Voltage control; IGBT; drive; power losses; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020547