Title :
On understanding and driving SiC power JFETs
Author :
Basu, Sreetama ; Undeland, Tore M.
Author_Institution :
Bose Res. PVT. Ltd., Bangalore, India
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.
Keywords :
junction gate field effect transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; high temperature operation; high voltage rating capabilities; low switching loss characteristics; power JFET; Capacitors; JFETs; Junctions; Logic gates; Resistance; Silicon carbide; Switches; Bipolar Junction Transistor (BJT); JFET; MOSFET; Silicon Carbide (SiC);
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
