Title :
Measurements on IGCTs and diodes series connection
Author :
Kerim, A. ; Steinke, Juergen ; Oedegard, B. ; Reichert, S.
Author_Institution :
ABB SWITZERLAND AG, Turgi, Switzerland
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
This paper presents experimental analysis of the voltage sharing in series connected IGCTs (Integrated Gate Commutated Thyristors) and their associated freewheeling diodes. Voltage sharing is evaluated in function of three interesting parameters: junction temperatures, gate units delay and switch off currents during switch off transients. Voltage unbalance can be improved by keeping time delay difference Δtdoff (IGCTs) and reverse recovery charge difference ΔQrr (diodes) as small as possible (Banding).
Keywords :
insulated gate bipolar transistors; thyristors; IGCT; diodes series connection; freewheeling diodes; gate units delay; integrated gate commutated thyristors; junction temperatures; switch off currents; voltage sharing; Delay; Junctions; Logic gates; Semiconductor diodes; Switches; Temperature measurement; Voltage measurement; High voltage applications; IGCT; Junction temperature; Power diode; Reverse recovery charge; Series connection; Voltage sharing; Voltage unbalance;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
