Title :
One more way to increase the recovery softness of fast high-voltage diodes
Author :
Chernikov, A.A. ; Gubarev, V.N. ; Stavtsev, A.V. ; Surma, A.M. ; Vetrov, I.Y.
Author_Institution :
Proton-Electrotex, Orel, Russia
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
There is a new way of increasing the softness of reverse recovery (S-factor) of high-voltage p+-p-n--n´-n+ diode using local reduction of life time in n part of layer adjacent to n+. Experimentally proved the possibility to reach S-factor above 2 for high-voltage diodes (Vbr ~ 4500-4800V) of such structure with snubberless recovery in circuit with inductive load and roll-off speed more than 1500A/μs.
Keywords :
power semiconductor diodes; reliability; high-voltage diode S-factor; high-voltage diode recovery softness; inductive load; lifetime local reduction; reverse recovery softness; roll-off speed; semiconductor element; snubberless recovery; voltage 4500 V to 4800 V; Doping profiles; Electric fields; Electronic mail; Impurities; P-i-n diodes; Radiative recombination; Discrete power device; Free Wheel Diode (FWD); bipolar diode; device characterization; fast recovery diode; power semiconductor device; reverse recovery;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
