Title :
Charge trapping/detrapping in HfO2-based MOS devices
Author :
Salomone, L. Sambuco ; Carbonetto, S.H. ; Garcia Inza, Mariano A. ; Lipovetzky, J. ; Redin, E.G. ; Campabadal, F. ; Faigon, A.
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
Abstract :
The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters.
Keywords :
MOS capacitors; hafnium compounds; tunnelling; HfO2; MOS devices; capacitance-voltage curve hysteresis; charge detrapping; charge trapping; insulating layer; tunneling front model; Capacitance; Capacitance-voltage characteristics; Electron traps; Hafnium compounds; Hysteresis; Tunneling; High-K gate dielectrics; MOS devices; hysteresis;
Conference_Titel :
Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2011
Conference_Location :
Buenos Aires
Print_ISBN :
978-1-4577-1236-4
