Title :
ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants
Author :
Dong Xu ; Biao Wang ; Mingshuang Li ; Xiao Ye
Author_Institution :
Sch. of Mater. Sci. & Eng., Jiangsu Univ., Zhenjiang, China
Abstract :
The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants were studied. The varistor ceramics samples were characterized by XRD and SEM analysis, as well as by dc electrical measurements, such as the nonlinearity coefficients, leakage current and threshold voltage. The best electrical characteristics were found in sample P2, which exhibited the threshold voltage was 347 V/mm, nonlinear coefficient was 39.2 and leakage current was 0.18 μA.
Keywords :
II-VI semiconductors; X-ray diffraction; ball milling; bismuth compounds; ceramics; crystal microstructure; leakage currents; scanning electron microscopy; varistors; wide band gap semiconductors; zinc compounds; SEM; XRD; ZnO-Bi2O3; direct high-energy ball milling; electrical measurement; leakage current; microstructure; nonlinearity coefficient; threshold voltage; varistor ceramics; Ball milling; Ceramics; Microstructure; Milling; Powders; Varistors; Zinc oxide; ZnO; electrical properties; high-energy ball milling; microstructure; varistors;
Conference_Titel :
Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on
Conference_Location :
Harbin, Heilongjiang, China
Print_ISBN :
978-1-61284-087-1
DOI :
10.1109/EMEIT.2011.6023148
