DocumentCode
554681
Title
Fabrication of vanadium oxide for uncooled FPAs using dual magnetron AC sputtering
Author
Lei Zhang ; Tao Dong ; Zhaochu Yang ; Pires, N. ; Yulong Zhang
Author_Institution
Dept. of Micro & Nano Syst. Technol., Vestfold Univ. Coll., Tonsberg, Norway
Volume
6
fYear
2011
fDate
12-14 Aug. 2011
Firstpage
2837
Lastpage
2840
Abstract
This paper presents a novel equipment with an improved structure of the magnetron sputtering for thin film fabrication. By using this equipment, a vanadium oxide thin film with a better TCR and uniformity can be fabricated. In this equipment, two magnets are aligned with the wafer table eccentrically so that the coupling effect is rendered. This changes the distribution of magnetic field lines for each single sputtering target; as a result, a magnetic field gradient in the z-directionis generated, which acts on Ar together with the alternating current (AC) electric field. Consequently, the goal of using relatively small sputtering target material to generate large uniform film on the substrate is achieved. Besides, there being no sedimentary insulation on the anode as the traditional structure, it can avoid the periodical purification for the equipment to ensure the continuous work.
Keywords
focal planes; insulation; sputter deposition; thin films; vanadium compounds; VOx; alternating current electric field; anode; dual magnetron AC sputtering; magnetic field gradient; sedimentary insulation; thin film fabrication; uncooled FPA; vanadium oxide; vanadium oxide thin film; wafer table; Magnetic confinement; Magnetic fields; Magnetic films; Resistance; Sputtering; Substrates; eccentric; magnetron sputtering; temperature coefficient of resistance (TCR); vanadium oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on
Conference_Location
Harbin, Heilongjiang, China
Print_ISBN
978-1-61284-087-1
Type
conf
DOI
10.1109/EMEIT.2011.6023693
Filename
6023693
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