• DocumentCode
    554681
  • Title

    Fabrication of vanadium oxide for uncooled FPAs using dual magnetron AC sputtering

  • Author

    Lei Zhang ; Tao Dong ; Zhaochu Yang ; Pires, N. ; Yulong Zhang

  • Author_Institution
    Dept. of Micro & Nano Syst. Technol., Vestfold Univ. Coll., Tonsberg, Norway
  • Volume
    6
  • fYear
    2011
  • fDate
    12-14 Aug. 2011
  • Firstpage
    2837
  • Lastpage
    2840
  • Abstract
    This paper presents a novel equipment with an improved structure of the magnetron sputtering for thin film fabrication. By using this equipment, a vanadium oxide thin film with a better TCR and uniformity can be fabricated. In this equipment, two magnets are aligned with the wafer table eccentrically so that the coupling effect is rendered. This changes the distribution of magnetic field lines for each single sputtering target; as a result, a magnetic field gradient in the z-directionis generated, which acts on Ar together with the alternating current (AC) electric field. Consequently, the goal of using relatively small sputtering target material to generate large uniform film on the substrate is achieved. Besides, there being no sedimentary insulation on the anode as the traditional structure, it can avoid the periodical purification for the equipment to ensure the continuous work.
  • Keywords
    focal planes; insulation; sputter deposition; thin films; vanadium compounds; VOx; alternating current electric field; anode; dual magnetron AC sputtering; magnetic field gradient; sedimentary insulation; thin film fabrication; uncooled FPA; vanadium oxide; vanadium oxide thin film; wafer table; Magnetic confinement; Magnetic fields; Magnetic films; Resistance; Sputtering; Substrates; eccentric; magnetron sputtering; temperature coefficient of resistance (TCR); vanadium oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on
  • Conference_Location
    Harbin, Heilongjiang, China
  • Print_ISBN
    978-1-61284-087-1
  • Type

    conf

  • DOI
    10.1109/EMEIT.2011.6023693
  • Filename
    6023693