DocumentCode :
555006
Title :
A new method of current calculation in power semiconductor devices of diode-clamped multilevel VSC
Author :
Dybko, Maxim A. ; Brovanov, Sergey V.
Author_Institution :
Power Electron. Dept., Novosibirsk, Russia
fYear :
2011
fDate :
7-9 July 2011
Firstpage :
1
Lastpage :
7
Abstract :
This paper presents a new method to calculate the currents in power semiconductor devices in any m-phase n-level neutral point-clamped (NPC) voltage source converter. As an example a three-phase three-level rectifier is considered. The RMS and average currents for different conditions are calculated and analyzed. The proposed method was verified by a set of the physical experiments.
Keywords :
PWM power convertors; power semiconductor devices; current calculation; diode-clamped multilevel VSC; m-phase n-level neutral point-clamped voltage source converter; power semiconductor devices; three-phase three-level rectifier; Current measurement; Power semiconductor devices; Pulse width modulation; Rectifiers; Semiconductor diodes; Switches; Switching circuits; Calculation technique; Space Vector PWM; multilevel VSC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energetics (IYCE), Proceedings of the 2011 3rd International Youth Conference on
Conference_Location :
Leiria
Print_ISBN :
978-1-4577-1494-8
Type :
conf
Filename :
6028272
Link To Document :
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