Title :
Low-Frequency Noise and Passive Imaging With 670 GHz HEMT Low-Noise Amplifiers
Author :
Grossman, Erich N. ; Leong, Kevin ; Xiaobing Mei ; Deal, William
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
We combine newly developed InP HEMT amplifiers operating at 670 GHz with a zero-bias diode (ZBD) in order to investigate limits on passive imaging performance possible with fully uncooled, direct-detection technology. Noise-equivalent temperature difference (NETD) values under 2 K are found for reference conditions (30 Hz modulation). However, noise spectra continue to fall approximately as 1/f out to “knee” frequencies of several hundred hertz (Hz) and spectral densities of ~ 0.12 K/Hz1/2 for the current, somewhat gain-starved, amplifiers. The amplifier alone contributes 0.043 K/Hz1/2. These results indicate that modest-sized, rapidly scanned arrays should provide real-time, passive imaging-desired for standoff security screening and other applications-with the same image quality as cryogenic bolometer arrays.
Keywords :
1/f noise; III-V semiconductors; high electron mobility transistors; indium compounds; low noise amplifiers; semiconductor diodes; wide band gap semiconductors; HEMT low-noise amplifiers; InP; cryogenic bolometer arrays; frequency 670 GHz; fully uncooled direct-detection technology; gain-starved amplifiers; image quality; low-frequency noise; modest-sized rapidly scanned arrays; noise spectra; noise-equivalent temperature difference value; passive imaging performance; spectral densities; standoff security screening; temperature 2 K; zero-bias diode; 1f noise; HEMTs; Imaging; Indium phosphide; Radar imaging; Radiometry; Submillimeter wave technology; Temperature measurement; $1/f$-noise; HEMT; Imaging; InP; passive; submillimeter (submm); terahertz (THz);
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2014.2352035