DocumentCode
555799
Title
The fabrication and characteristics of Vertical Organic Thin-Film Transistor
Author
Wang, Dongxing ; Liu, Vue ; Yue Wang ; Jiao, Bingbing ; Zhao, Hong
Author_Institution
Key Lab. of Eng. Dielectr. & Its Applic., Harbin Univ. of Sci. & Technol., Harbin, China
Volume
1
fYear
2011
fDate
26-30 July 2011
Firstpage
256
Lastpage
258
Abstract
Vertical Organic Thin-Film Transistors (VOTFT) that consisted of copper phthalocyanine(CuPc) which sandwich structure of Au(Source)/CuPc/Al(Gate)/CuPc/Au(Darin) have been fabricated using vacuum evaporated technology. When the conditions of bias voltage was VDS=2V, IDS/IGS=1000 and current density JDS=1.1mA/mm2 were observed. From the experiment results, VOTFTs were of lower driving voltage and higher current density and bipolar static induction transistor operation characteristics were obtained.
Keywords
copper compounds; current density; optical fabrication; organic semiconductors; static induction transistors; Au-Al-Au; bipolar static induction transistor operation; copper phthalocyanine; current density; sandwich structure; vacuum evaporated technology; vertical organic thin-film transistor; Educational institutions; Gold; CuPc; Organic semiconductor; VOTFT; film transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSQRWC), 2011
Conference_Location
Harbin
Print_ISBN
978-1-4244-9792-8
Type
conf
DOI
10.1109/CSQRWC.2011.6036933
Filename
6036933
Link To Document