DocumentCode
55580
Title
3-D Cross-Point Array Operation on 
-Based Vertical Resistive Switching Memory
Author
Bin Gao ; Bing Chen ; Rui Liu ; Feifei Zhang ; Peng Huang ; Lifeng Liu ; Xiaoyan Liu ; Jinfeng Kang ; Hong-Yu Chen ; Shimeng Yu ; Wong, H.-S Philip
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
61
Issue
5
fYear
2014
fDate
May-14
Firstpage
1377
Lastpage
1381
Abstract
A comprehensive array operation scheme for a multilayer stacked 3-D vertical resistive random access memory (RRAM) cross-point array architecture is developed. Based on the proposed READ/WRITE scheme, each memory cell in the 3-D array can be randomly accessed. The fabricated AlOyHfOx-based bilayer vertical RRAM array with excellent device-to-device and layer-to-layer uniformity is applied to demonstrate the feasibility of the proposed operation scheme.
Keywords
aluminium compounds; electronic switching systems; hafnium compounds; random-access storage; 3D cross point array operation; AlOy-HfOx; READ/WRITE scheme; RRAM; device-to-device uniformity; layer-to-layer uniformity; memory cell; multilayer stacked 3D vertical resistive random access memory; vertical resistive switching memory; Arrays; Educational institutions; Hafnium compounds; Microprocessors; Resistance; Switches; 3-D integration; cross-point array; resistive random access memory (RRAM); resistive switching; resistive switching.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2311655
Filename
6780612
Link To Document