The influence of the ambient and junction temperature on the MPS critical parameters

Author

Hapka, Aneta ; Janke, Wlodzimierz

Author_Institution

Koszalin Univ. of Technol., Koszalin, Poland

fYear

2011

fDate

27-29 Sept. 2011

Firstpage

1

Lastpage

3

Abstract

The measurements and simulations of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD´s in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed. The critical current and junction temperature estimation for SiC SBD is explained.

Keywords

Schottky barriers; Schottky diodes; circuit feedback; silicon compounds; wide band gap semiconductors; I-V characteristics calculation; MPS diodes; Schottky barrier diodes; SiC; ambient temperature; critical current estimation; electrothermal models; electrothermal positive feedback; forward voltage; isothermal DC characteristics; junction temperature estimation; nonisothermal DC characteristics; self-heating phenomenon; the MPS critical parameters; Junctions; Schottky diodes; Silicon carbide; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on

Conference_Location

Paris

Print_ISBN

978-1-4577-0778-0

Type

conf

Filename

6081006