• DocumentCode
    556389
  • Title

    Self-heating effects in nano-scaled MOSFETs and thermal aware compact models

  • Author

    Burenkov, Alex ; Lorenz, Jürgen

  • Author_Institution
    Fraunhofer Inst. for Integrated Syst. & Device Technol., Erlangen, Germany
  • fYear
    2011
  • fDate
    27-29 Sept. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Self-heating of MOSFETs scaled according to ITRS specifications for the years 2010 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can exceed 100 K and must be considered in IC design. For this purpose, compact models (BSIM3SOI and BSIM4SOI) accounting for self-heating effect were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.
  • Keywords
    MOSFET; nanoelectronics; numerical analysis; semiconductor device models; silicon-on-insulator; thermal analysis; BSIM3SOI; BSIM4SOI; IC design; ITRS specifications; SOI based transistors; SOI-MOSFET; nanoscaled MOSFET; numerical TCAD simulations; self-heating effects; thermal aware compact models; Integrated circuit modeling; MOSFETs; Numerical models; Semiconductor device modeling; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4577-0778-0
  • Type

    conf

  • Filename
    6081041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=556389