DocumentCode
556807
Title
Photoresist strip effects on dopant distribution, activation and junction recess
Author
Berry, Ivan L., III
Author_Institution
Strategic Technology, Axcelis Technologies
fYear
2011
fDate
5-6 Sept. 2011
Firstpage
1
Lastpage
15
Abstract
A collection of slides about photoresist strip effects on dopant distribution, activation and junction recess is presented.
Keywords
photoresists; dopant activation; dopant distribution; dopant junction recess; photoresist strip effects; Hydrogen; Implants; Logic gates; Oxygen; Silicon; Silicon germanium; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1523-553X
Print_ISBN
978-1-4577-1647-8
Type
conf
Filename
6086034
Link To Document