DocumentCode :
556807
Title :
Photoresist strip effects on dopant distribution, activation and junction recess
Author :
Berry, Ivan L., III
Author_Institution :
Strategic Technology, Axcelis Technologies
fYear :
2011
fDate :
5-6 Sept. 2011
Firstpage :
1
Lastpage :
15
Abstract :
A collection of slides about photoresist strip effects on dopant distribution, activation and junction recess is presented.
Keywords :
photoresists; dopant activation; dopant distribution; dopant junction recess; photoresist strip effects; Hydrogen; Implants; Logic gates; Oxygen; Silicon; Silicon germanium; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1523-553X
Print_ISBN :
978-1-4577-1647-8
Type :
conf
Filename :
6086034
Link To Document :
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