Title :
An analysis of the modeling accuracy of the GaAs MESFET models for telecommunication power amplifier design
Author_Institution :
Santa Clara Univ., Santa Clara, CA, USA
Abstract :
A collection of slides about analysis of the modeling accuracy of the GaAs MESFET models for telecommunication power amplifier design is presented.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated circuit design; power amplifiers; semiconductor device models; GaAs; MESFET models; telecommunication power amplifier design; Analytical models; Collaboration; Communications technology; Educational institutions; Joints; MESFETs; Manufacturing;
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-1647-8
