DocumentCode
556849
Title
Reduction of void defects on copper dual-damascene interconnect by integrated data-driven manufacturing
Author
Tanaka, Tomoya
Author_Institution
Panasonic Corporation
fYear
2011
fDate
5-6 Sept. 2011
Firstpage
1
Lastpage
10
Abstract
A collection of slides from the author´s conference presentation about the reduction of void defects on copper dual-damascene interconnect by integrated data-driven manufacturing is presented.
Keywords
copper; interconnections; semiconductor device manufacture; semiconductor industry; voids (solid); copper dual damascene interconnect; integrated data driven manufacturing; void defects; Analytical models; Collaboration; Joints; Manufacturing; Metrology; Monitoring; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1523-553X
Print_ISBN
978-1-4577-1647-8
Type
conf
Filename
6086076
Link To Document