Title :
Reducing line edge roughness using argon ion implantation
Author_Institution :
Powerchip Technology Corporation, Module Technology Division, Diffusion Technology Group
Abstract :
1. To further balance the improvement between two side LER and lower CD shrinkage, it could choose different pre-PR treatment or optimize Ar implant condition in 50nm PR. 2. The further investigations need to be studied if PR type changes or PR line dimension shrinks.
Keywords :
argon; ion implantation; semiconductor device manufacture; surface roughness; argon ion implantation; dimension shrinks; line edge roughness; lower CD shrinkage; wavelength 50 nm; Argon; Collaboration; Curing; Implants; Joints; Manufacturing; Resistance;
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-1647-8
