• DocumentCode
    556858
  • Title

    The unopened contact hole induced by Ammonium Chloride deposit after sidewall silicon nitride formation in high aspect ratio contact(HARC)

  • Author

    Yuan, Yin Te

  • Author_Institution
    Powerchip Technology Corp., Module Technology Division, Diffusion group
  • fYear
    2011
  • fDate
    5-6 Sept. 2011
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    NH4Cl deposited defect formation in HARC. Unopened contact due to etch-back blocking. Two approach for defect improvement; DI water rinse; High temp. N2 purge. Both approach is effective and easily integrated. Stringent queue time control is critical.
  • Keywords
    ammonium compounds; chemical vapour deposition; crystal defects; etching; silicon compounds; DI water rinse; HARC; N2 purge; NH4Cl; Si3N4; ammonium chloride deposit; defect formation; etch-back blocking; high aspect ratio contact; high temperature; sidewall silicon nitride formation; stringent queue time control; unopened contact hole; Collaboration; Furnaces; Joints; Manufacturing; Silicon; Silicon compounds; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-1647-8
  • Type

    conf

  • Filename
    6086085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=556858