Title :
X-band T/R module based on GaN MMICs power amplifier
Author :
Jun, Zhu ; Zhipeng, Zhou ; Henian, Shi ; Qing, Guo ; Xiaojiang, Yao
Author_Institution :
Forth Dept., Nanjing Res. Inst. of Electron. Technol., Nanjing, China
Abstract :
In this paper a novel X-band T/R module based on a GaN-HEMT MMICs high power amplifier chain, comprising a driver amplifier (DA) and a high power amplifier (HPA) will be presented. A multifunction chip is integrated in the T/R module to reduce the size and weight. The DC control electronics is designed based on multi-layer low temperature co-fired ceramic (LTCC) technology. Output power level of 43 dBm (20 W) for the T/R module is measured.
Keywords :
MMIC; ceramic packaging; high electron mobility transistors; power amplifiers; DC control electronics; GaN MMIC; GaN-HEMT MMIC; X-band T/R module; driver amplifier; high power amplifier; multifunction chip; multilayer low temperature co-fired ceramic technology; Gain; Gallium nitride; MMICs; Noise measurement; Power amplifiers; Power generation; Semiconductor device measurement; GaN; LTCC; T/R module; X-band; high power amplifier chain; multifunction chip;
Conference_Titel :
Synthetic Aperture Radar (APSAR), 2011 3rd International Asia-Pacific Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4577-1351-4
