1kW Solid State Power Amplifier for L-band radar system

Author

Kim, Ki-Won ; Kwack, Ju-Young ; Cho, Samuel

Author_Institution

RFHIC Corp., Suwon, South Korea

fYear

2011

fDate

26-30 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

A 1kW Solid State Power Amplifier (SSPA) is proposed for achieving high power and high efficiency using Gallium Nitride (GaN) technology for L-band radar applications. Measured results showed more than 1 kW within a 200 MHz bandwidth with 53 dB gain and a typical 50% drain efficiency. The SSPA realizes a negative voltage supply, sequential bias circuit, temperature sensor circuit, and external switching circuit including. Its compact and lightweight design is suitable for various radar systems. This paper presents a high power SSPA using GaN HEMT device that appears high power and high efficiency.

Keywords

III-V semiconductors; high electron mobility transistors; power amplifiers; radar; temperature sensors; GaN; HEMT device; L-band radar system; bandwidth 200 MHz; external switching circuit; gain 53 dB; gallium nitride technology; negative voltage supply; power 1 kW; sequential bias circuit; solid state power amplifier; temperature sensor circuit; Gallium nitride; HEMTs; Power amplifiers; Power generation; Radar applications; Solids; GaN; Pulsed Amplifier; Radar; SSPA;

fLanguage

English

Publisher

ieee

Conference_Titel

Synthetic Aperture Radar (APSAR), 2011 3rd International Asia-Pacific Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4577-1351-4

Type

conf

Filename

6086961