Preparation induced electrical behaviour of GeSiO nanostructures

GeSiO nanostructures obtained by using two different preparation methods, sol-gel and magnetron-sputtering were studied. They are formed from Ge nanoparticles dispersed in amorphous matrix, with different morphology depending on the preparation method. Electrical investigations (current-voltage and current-temperature measurements) were performed and experimental results were modelled. It was shown that preparation conditions induce the electrical behaviour of GeSiO films, so that the electrical transport in sputtered films is governed by a hopping mechanism, while in sol-gel ones it is dominated by the junction formed at the interface with Si substrate. Also, the temperature dependence of current shows different hopping mechanisms.