• DocumentCode
    557330
  • Title

    SiO2-metal cantilever structures under thermal and intrinsic stress

  • Author

    Tibeica, C. ; Damian, V. ; Muller, R.

  • Author_Institution
    Nat. Inst. for R&D in Microtechnologies, IMT-Bucharest, Bucharest, Romania
  • Volume
    1
  • fYear
    2011
  • fDate
    17-19 Oct. 2011
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    The mechanical behavior of multi-layered cantilever structures made of SiO2 coated with thin metal films (chromium and gold) is investigated considering the intrinsic and thermal stress. Experimental measurements and numerical simulations were performed to analyze the influence of residual stress components on such cantilever structures.
  • Keywords
    Young´s modulus; cantilevers; chromium; gold; internal stresses; metal-insulator boundaries; metallic thin films; multilayers; numerical analysis; silicon compounds; thermal stresses; SiO2-Au; SiO2-Cr; intrinsic stress; mechanical properties; multilayered cantilever structure; numerical simulation; residual stress component; thermal stress; thin metal films; Data models; Materials; Residual stresses; Temperature; Temperature measurement; Thermal stresses; FEM simulation; WLI characterization; cantilever; intrinsic stress; silicon oxide; thermal stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2011 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-61284-173-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2011.6095747
  • Filename
    6095747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=557330