Title :
A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
Author :
Schwantusche, D. ; Haupt, C. ; Kiefer, R. ; Brückner, P. ; Seelmann-Eggebert, M. ; Mikulla, M. ; Kallfass, I. ; Quay, R.
Author_Institution :
Fraunhofer Inst. Appl. Solid-State Phys. (IAF), Freiburg, Germany
Abstract :
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using 100 nm AlGaN/GaN dual-gate HEMTs. For the fabricated dual-stage amplifier a continuous wave saturated output power of up to 24.8 dBm (0.84 W/mm) at 63 GHz for 20 V drain bias was measured. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar transmission lines; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; continuous wave saturated output power; dual-gate HEMT; frequency 56 GHz to 65 GHz; grounded coplanar transmission line technology; high-power amplifier MMIC; size 100 nm; voltage 20 V; Gain; Gallium nitride; HEMTs; MMICs; MODFETs; Power amplifiers; Power measurement;
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
