Broadband 31–65 GHz inductorless active balun with 12.4 dB gain in 0.13μm SiGe:C BiCMOS technology

Author

Awny, A. ; Wipf, Christian ; Scheytt, J. Christoph ; Thiede, A.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

1213

Lastpage

1216

Abstract

An inductorless single-ended input to differential output active balun is presented. The balun has a 12.4 dB gain at 50 GHz and a 3-dB bandwidth from 31 to 65 GHz. Measured maximum amplitude and phase errors between the two outputs are 0.5 dB and 2.5°, respectively. Measured input and output reflection are below -15 dB and -10 dB respectively and the reverse isolation is better than 38 dB. Time domain measurements indicate 1.4 ps and 187 fs peak-to-peak and rms jitter, respectively. The balun is designed in a 0.13 μm SiGe:C BiCMOS technology, dissipates 278 mW and occupies 0.47 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; bipolar MIMIC; carbon; timing jitter; SiGe:C; SiGe:C BiCMOS technology; amplitude errors; broadband inductorless active balun; differential output active balun; frequency 31 GHz to 65 GHz; gain 12.4 dB; inductorless single-ended input; phase errors; power 278 mW; reverse isolation; rms jitter; size 0.13 mum; time domain measurements; Bandwidth; Broadband communication; Gain; Impedance matching; Jitter; Silicon germanium; Transmission line measurements; Active inductors; active circuits; broadband amplifiers; millimeter wave integrated circuits; silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6101768