• DocumentCode
    558146
  • Title

    Effects of gate bias voltage and compression level on a X-band MMIC Class F−1 PA

  • Author

    Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco

  • Author_Institution
    Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome, Italy
  • fYear
    2011
  • fDate
    10-13 Oct. 2011
  • Firstpage
    1107
  • Lastpage
    1110
  • Abstract
    In this contribution, the performances of a Class F-1 power amplifier are studied, highlighting their dependence on transistor bias point and input power level. First, a concise mathematical analysis is given, describing the drain current behavior. Theoretical assessments are validated through non- linear measurements performed on a X-band MMIC PA in GaAs technology, which can achieve a peak efficiency of 54% in correspondence of a saturated output power of 27 dBm.
  • Keywords
    III-V semiconductors; MMIC amplifiers; field effect MMIC; gallium arsenide; power amplifiers; GaAs; X-band MMIC class F-1 PA; compression level; gate bias voltage; power amplifier; Current measurement; Harmonic analysis; Microwave circuits; Power amplifiers; Power generation; Power measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2011 41st European
  • Conference_Location
    Manchester
  • Print_ISBN
    978-1-61284-235-6
  • Type

    conf

  • Filename
    6101789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=558146