• DocumentCode
    558292
  • Title

    Baseband digital predistortion of a 10 W GaN power amplifier

  • Author

    Madero-Ayora, M.J. ; Barataud, D. ; Dine, M.S.E. ; Neveux, G. ; Nebus, J.M. ; Reina-Tosina, J. ; Allegue-Martínez, M. ; Crespo-Cadenas, C.

  • Author_Institution
    Camino de los Descubrimientos s/n, Univ. de Sevilla, Seville, Spain
  • fYear
    2011
  • fDate
    10-13 Oct. 2011
  • Firstpage
    341
  • Lastpage
    344
  • Abstract
    In this paper, two different models for the baseband digital predistortion of a GaN power amplifier have been applied: the widely-used Memory Polynomial (MP) model and the recently proposed Behavioral Model with Dynamic Deviation Reduction for Wideband Amplifiers (DVBW). Their performance has been experimentally compared in terms of Adjacent Channel Power Ratio, Error Vector Magnitude and Power Added Efficiency. The DVBW model outperformed in general the MP model, exhibiting also good generalization characteristics.
  • Keywords
    III-V semiconductors; distortion; gallium compounds; polynomials; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; GaN power amplifier; baseband digital predistortion; dynamic deviation reduction; memory polynomial; power 10 W; wideband amplifiers; Baseband; Digital video broadcasting; Gallium nitride; Power generation; Predistortion; Vectors; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2011 41st European
  • Conference_Location
    Manchester
  • Print_ISBN
    978-1-61284-235-6
  • Type

    conf

  • Filename
    6101936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=558292