A 10 GHz integrated single sideband upconverter in 0.25 μm BiCMOS technology

Author

De Boer, Lex ; Rodenburg, Marien ; Van Dijk, Raymond ; Van Vliet, Frank E. ; Geurts, Marcel

Author_Institution

Dept. Transceivers, TNO, The Hague, Netherlands

fYear

2011

fDate

10-13 Oct. 2011

Firstpage

1123

Lastpage

1126

Abstract

An 8-10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be compatible with more than one type of direct digital synthesizer and to minimize spurious products that are not cancelled by the mixer concept. The device has sideband suppression of over 45 dB and third-order spurious suppression of over 40 dB.

Keywords

BiCMOS integrated circuits; direct digital synthesis; driver circuits; elemental semiconductors; field effect MMIC; microwave mixers; microwave oscillators; silicon; DC offset circuitry; Gilbert upconversion mixer; IF chain; QuBiC4X BiCMOS process; Si; direct digital synthesizer; frequency 8 GHz to 10 GHz; integrated local oscillator driver; integrated single sideband upconverter; linearised single-sideband mixer; polyphase quadrature generation; sideband suppression; silicon BiCMOS technology; size 0.25 mum; third-order spurious suppression; Amplitude modulation; BiCMOS integrated circuits; Computer architecture; Frequency modulation; Gain; Mixers; Radio frequency; BiCMOS integrated circuits; frequency conversion; mixer; modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2011 41st European

Conference_Location

Manchester

Print_ISBN

978-1-61284-235-6

Type

conf

Filename

6101961