Title :
A 10 GHz integrated single sideband upconverter in 0.25 μm BiCMOS technology
Author :
De Boer, Lex ; Rodenburg, Marien ; Van Dijk, Raymond ; Van Vliet, Frank E. ; Geurts, Marcel
Author_Institution :
Dept. Transceivers, TNO, The Hague, Netherlands
Abstract :
An 8-10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be compatible with more than one type of direct digital synthesizer and to minimize spurious products that are not cancelled by the mixer concept. The device has sideband suppression of over 45 dB and third-order spurious suppression of over 40 dB.
Keywords :
BiCMOS integrated circuits; direct digital synthesis; driver circuits; elemental semiconductors; field effect MMIC; microwave mixers; microwave oscillators; silicon; DC offset circuitry; Gilbert upconversion mixer; IF chain; QuBiC4X BiCMOS process; Si; direct digital synthesizer; frequency 8 GHz to 10 GHz; integrated local oscillator driver; integrated single sideband upconverter; linearised single-sideband mixer; polyphase quadrature generation; sideband suppression; silicon BiCMOS technology; size 0.25 mum; third-order spurious suppression; Amplitude modulation; BiCMOS integrated circuits; Computer architecture; Frequency modulation; Gain; Mixers; Radio frequency; BiCMOS integrated circuits; frequency conversion; mixer; modulation;
Conference_Titel :
Microwave Conference (EuMC), 2011 41st European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-235-6
