High efficiency, wide band 50 watt, 28V InGaP/GaAs HBT MMIC

Author

Ma, Wenlong ; Sun, Xiaopeng ; Lam, Philip ; Hu, Peter ; Yao, Jingshi ; Liu, Louis ; Chau, Frank ; Zhang, Xiangkun ; Lin, Barry

Author_Institution

TriQuint Semicond., San Jose, CA, USA

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

538

Lastpage

541

Abstract

This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of the device reaches 47dBm (50W), with a gain of around 31dB, collect efficiency of 65%. Test with a DPD (digital pre-distortion) system, this MMIC can reach ACLR of -57dBc at Pout=41dBm with collect efficiency of 36% for WCDMA two carriers modulation signal (PAR=6.5dBc, 2c0110 signal configuration).

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; code division multiple access; gallium arsenide; heterojunction bipolar transistors; indium compounds; HVHBT; InGaP-GaAs; MMIC; TriQuint Semiconductor; WCDMA; carriers modulation signal; digital predistortion system; high efficiency wide band high voltage HBT; power 50 W; voltage 28 V; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MMICs; Performance evaluation; Power amplifiers; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102786