Title :
S-band internally harmonic matched GaN FET with 330W output power and 62% PAE
Author :
Yamanaka, K. ; Kimura, M. ; Chaki, S. ; Nakayama, M. ; Hirano, Y.
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
In this paper, an S-band internally harmonic matched GaN FET is presented, which is designed so that up to third harmonic impedance is tuned to high efficiency condition. Harmonic load pull measurements were done for a small transistor cell at first. It was found that power added efficiency (PAE) of 78% together with 6W output power can be obtained by tuning impedances up to 3rd harmonic for both input and output sides. Then matching circuit was designed for large gate periphery multi-cell transistor. To make the circuit size small, harmonic matching was done in a hermetically sealed package. With total gate width of 64mm, 330W output power and 62% PAE was successfully obtained.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium compounds; hermetic seals; microwave field effect transistors; packaging; wide band gap semiconductors; GaN; S-band; harmonic load pull measurements; hermetically sealed package; internally harmonic matched GaN FET; matching circuit; periphery multicell transistor; small transistor cell; third harmonic impedance; tuning impedances; Gallium nitride; HEMTs; Harmonic analysis; Impedance; MODFETs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
