Title :
Broadband 31–65 GHz inductorless active balun with 12.4 dB gain in 0.13μm SiGe:C BiCMOS technology
Author :
Awny, A. ; Wipf, Christian ; Scheytt, J. Christoph ; Thiede, A.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
An inductorless single-ended input to differential output active balun is presented. The balun has a 12.4dB gain at 50GHz and a 3-dB bandwidth from 31 to 65GHz. Measured maximum amplitude and phase errors between the two outputs are 0.5 dB and 2.5°, respectively. Measured input and output reflection are below -15dB and -10dB respectively and the reverse isolation is better than 38 dB. Time domain measurements indicate 1.4 ps and 187 fs peak-to-peak and rms jitter, respectively. The balun is designed in a 0.13 μm SiGe:C BiCMOS technology, dissipates 278mW and occupies 0.47 mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; jitter; BiCMOS technology; SiGe:C; broadband inductorless active balun; differential output; frequency 31 GHz to 65 GHz; gain 12.4 dB; inductorless single-ended input; jitter; maximum amplitude; phase error; power 278 mW; reverse isolation; size 0.13 mum; time domain measurement; Bandwidth; Broadband communication; Gain; Impedance matching; Jitter; Silicon germanium; Transmission line measurements; Active inductors; active circuits; broadband amplifiers; millimeter wave integrated circuits; silicon germanium;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
