DocumentCode :
558496
Title :
Figures of merit and performance measurements for RF and microwave tunable matching networks
Author :
Sánchez-Pérez, César ; De Mingo, Jesús ; García-Dúcar, Paloma ; Carro, Pedro L. ; Valdovinos, Antonio
Author_Institution :
Aragon Inst. for Eng. Res. (I3A), Univ. of Zaragoza, Zaragoza, Spain
fYear :
2011
fDate :
10-11 Oct. 2011
Firstpage :
402
Lastpage :
405
Abstract :
RF and microwave tunable matching networks (TMNs) development is quickly growing as increasing their interest and demand for applications in wireless and mobile communication systems. Although this topic has been extensively reported in the literature in the last years, there are still some unclear issues regarding the performance measurements and the best figures of merit to accurately characterize these circuits. In this paper, we present an overview of some usual metrics with their pros and cons, focusing mainly in the Smith chart coverage concept and in the losses definition. We also introduce the concept of TMN gain. To illustrate this study, we will use a fabricated and measured TMN based on silicon-glass PIN diodes as switching elements.
Keywords :
elemental semiconductors; integrated circuit measurement; microwave integrated circuits; mobile communication; p-i-n diodes; silicon; silicon compounds; switching circuits; RF tunable matching networks performance measurement; Si-SiO2; Smith chart coverage; TMN gain; figures of merit; microwave tunable matching networks; mobile communication systems; silicon-glass PIN diode; switching elements; wireless communication systems; Gain; Measurement; Microwave circuits; Microwave integrated circuits; PIN photodiodes; Radio frequency; Transducers; PIN diode; Tunable matching network; figure of merit; impedance matching; reconfigurable;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
Type :
conf
Filename :
6102817
Link To Document :
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