Switchable double-sensor integrated active probe for near-field scanner

Author

Uddin, Nasir ; Thiede, Andreas

Author_Institution

Dept. of High-Freq. Electron., Univ. of Paderborn, Paderborn, Germany

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

37

Lastpage

40

Abstract

A switchable double-sensor input single-output is designed, fabricated and characterized in OMMIC GaAs pHEMT technology. The realized differential amplifier shows a gain of 28 dB and a 3 dB bandwidth of above 5 GHz. Two different miniature sensors (loop and dipole) are integrated at the input of the designed amplifier. This double-sensor probe will be used to measure a magnetic and an electric field component for a single spatial positioning of the probe. A measurement technique is proposed to prove the operability of the designed switchable double-sensor probe and results are presented.

Keywords

III-V semiconductors; differential amplifiers; electric field measurement; gallium arsenide; high electron mobility transistors; magnetic field measurement; microwave amplifiers; sensors; GaAs; differential amplifier; near-field scanner; pHEMT technology; spatial positioning; switchable double-sensor integrated active probe; Frequency measurement; Magnetic field measurement; Magnetic fields; Probes; Semiconductor device measurement; Sensors; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102818