Title :
Designing on-wafer calibration standards for advanced high-speed BiCMOS technology
Author :
Rumiantsev, A. ; Pourchon, F. ; Derrier, N. ; Sakalas, P. ; Celi, D.
Author_Institution :
Cascade Microtech GmbH, Sacka, Germany
Abstract :
This work presents design methodology of on-wafer calibration standards covering frequencies up to 110 GHz and optimized for the BiCMOS processes. We discuss such topics as layout optimization of distributed and lumped standards, measurement and verification of electrical characteristics along with the definition of the on-wafer calibration reference impedance and measurement reference plane. Also, we present calibration verification results and some characteristics of an active DUT implemented in Si/SiGe:C ST Microelectronics´ BiCMOS9MW process technology.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; calibration; carbon; high-speed integrated circuits; integrated circuit design; DUT; ST Microelectronics; Si-SiGe:C; frequency 110 GHz; high-speed BiCMOS technology; layout optimization; measurement reference plane; on-wafer calibration reference impedance; on-wafer calibration standards; Calibration; Frequency measurement; Impedance; Metals; Microwave measurements; Silicon; Standards;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
