Title :
Effects of gate bias voltage and compression level on a X-band MMIC class F−1 PA
Author :
Cipriani, Elisa ; Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco
Author_Institution :
Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome, Italy
Abstract :
In this contribution, the performances of a Class F-1 power amplifier are studied, highlighting their dependence on transistor bias point and input power level. First, a concise mathematical analysis is given, describing the drain current behavior. Theoretical assessments are validated through nonlinear measurements performed on a X-band MMIC PA in GaAs technology, which can achieve a peak efficiency of 54% in correspondence of a saturated output power of 27 dBm.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; mathematical analysis; GaAs; GaAs technology; X-band MMIC class F-1 PA; class F-1 power amplifier; compression level; drain current behavior; gate bias voltage; input power level; mathematical analysis; transistor bias point; Current measurement; Harmonic analysis; Microwave integrated circuits; Microwave theory and techniques; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
