DocumentCode :
558507
Title :
Manga: Manufacturable GaN
Author :
Mikulla, Michael ; Storm, Sabine ; Henelius, Niklas ; Poisson, Marie-Antoinette ; Janzen, Eric ; Zanoni, Enrico ; Kuball, Martin
Author_Institution :
Fraunhofer-Inst. for Appl. Solid State Phys., Germany
fYear :
2011
fDate :
10-11 Oct. 2011
Firstpage :
336
Lastpage :
339
Abstract :
Manga is a five Nation (Germany, France, Italy, Sweden and United Kingdom) joint project realized by the European Defence Agency (EDA) which focuses on SiC substrates and a GaN epi wafers supply chain. The main objective of the project, started in March 2010, is to sustain the industrial development of semi-insulating silicon carbide substrates (SI SiC) and prove the industrial capability of Europe to deliver GaN HEMT and MMIC foundries with state-of-the-art GaN HEMT epitaxial wafers on SI-SiC substrates. This paper gives an overview on the current status of the technical developments achieved within the project.
Keywords :
III-V semiconductors; MMIC; foundries; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; European Defence Agency; France; GaN; Germany; HEMT; Italy; MMIC; Manga; SiC; Sweden; United Kingdom; foundries; industrial development; Aluminum gallium nitride; Epitaxial growth; Gallium nitride; HEMTs; Silicon; Silicon carbide; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
Type :
conf
Filename :
6102828
Link To Document :
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