Title :
High linearity MMIC amplifiers for on-board satellite S-DMB converters
Author :
Jato, Yolanda ; Herrera, Amparo
Author_Institution :
Dept. of Commun. Eng., Univ. de Cantabria, Santander, Spain
Abstract :
This paper presents the design, simulation and measurement of two GaAs P-HEMT high linearity amplifiers for S-DMB applications, operating in the S and UHF bands. The amplifiers are part of a high linearity downconverter, so a specific topology and an active matching network have been chosen to achieve a high OIP3 value as well as good input and output return losses without using any external components. The S-band and UHF-band amplifiers exhibit an OIP3 of 23 dBm and 27 dBm respectively. They have also been measured included in a down-converter, achieving a total gain of 19 dB, an ouput P1dB of 10.5 dBm and a OIP3 of 31 dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; UHF amplifiers; UHF frequency convertors; artificial satellites; direct broadcasting by satellite; field effect MMIC; gallium arsenide; multimedia communication; space vehicle electronics; GaAs; P-HEMT high linearity amplifiers; S band; UHF band; active matching network; gain 19 dB; high linearity MMIC amplifier; high linearity downconverter; on board satellite S-DMB converters; Current measurement; Gain; Impedance matching; Linearity; Mobile communication; Transistors; UHF measurements; Amplifier; GaAs; MMIC; S-DMB; linearity; satellite communications;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3