Title :
Analysis of GaN HEMTs for broadband high-power amplifier design
Author :
Musser, M. ; Quay, R. ; van Raay, F. ; Mikulla, M. ; Ambacher, O.
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
Abstract :
In this paper we present the analysis of GaN HEMT power cells for broadband high-power amplifier design. We compare different power cell layouts, different Al contents in the barrier layer, and different fieldplate configurations. With the results of the analysis we can specifically optimize the epitaxial choice, fieldplate configuration, and the layout of the power cell for broadband high-power amplifiers. The main findings include the challenging interdependence of the parameters with the variation of the technology parameters.
Keywords :
gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT power cell layout; broadband high-power amplifier design; epitaxial choice; fieldplate configurations; Broadband communication; Capacitance; Gain; Impedance; Metallization; Power generation; Power measurement;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
