DocumentCode
558532
Title
Analysis of GaN HEMTs for broadband high-power amplifier design
Author
Musser, M. ; Quay, R. ; van Raay, F. ; Mikulla, M. ; Ambacher, O.
Author_Institution
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
fYear
2011
fDate
10-11 Oct. 2011
Firstpage
128
Lastpage
131
Abstract
In this paper we present the analysis of GaN HEMT power cells for broadband high-power amplifier design. We compare different power cell layouts, different Al contents in the barrier layer, and different fieldplate configurations. With the results of the analysis we can specifically optimize the epitaxial choice, fieldplate configuration, and the layout of the power cell for broadband high-power amplifiers. The main findings include the challenging interdependence of the parameters with the variation of the technology parameters.
Keywords
gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT power cell layout; broadband high-power amplifier design; epitaxial choice; fieldplate configurations; Broadband communication; Capacitance; Gain; Impedance; Metallization; Power generation; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location
Manchester
Print_ISBN
978-1-61284-236-3
Type
conf
Filename
6102853
Link To Document