DocumentCode
558535
Title
DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects
Author
El Rafei, A. ; Callet, G. ; Mouginot, G. ; Faraj, J. ; Laurent, S. ; Prigent, M. ; Quere, R. ; Jardel, O. ; Delage, S.
Author_Institution
C2S2 Dept., XLIM Lab., Brive-la-Gaillarde, France
fYear
2011
fDate
10-11 Oct. 2011
Firstpage
5
Lastpage
8
Abstract
A test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been set-up, this set-up has been used to investigate the DC to RF behavior of AlInN/GaN HEMTS. The measurement performed have demonstrated the dispersion effects observed on GaN HEMTS due to trapping effects and proved very useful for in-depth characterization of RF devices.
Keywords
S-parameters; high electron mobility transistors; AlInN-GaN; DC-to-RF behavior; HEMTS; RF devices; S-parameter measurement; frequency 10 Hz to 40 GHz; low frequency dispersion effect; output conduction extraction; trapping effect; Dispersion; Frequency measurement; Gallium nitride; Radio frequency; Temperature measurement; Transistors; Voltage measurement; AlInN/GAN; HEMT; dispersion; thermal; traps;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location
Manchester
Print_ISBN
978-1-61284-236-3
Type
conf
Filename
6102856
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