A 60 GHz four channel beamforming transmitter in 0.25 μm SiGe BiCMOS technology

Author

Elkhouly, M. ; Glisic, S. ; Ellinger, F. ; Schyett, J.C.

Author_Institution

Circuit Design Dept., IHP Microelectron., Frankfurt (Oder), Germany

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

25

Lastpage

28

Abstract

A four channel 60 GHz beamforming transmitter based on an RF phase shifting architecture is developed fabricated in a SiGe BiCMOS process. The transmitter includes an integrated 48 GHz frequency synthesizer, an up-conversion mixer, and a fully differential millimeter-wave power division and distribution network. Each channel consists of a 2 bit digitally controlled phase shifter and a high power amplifier. The transmitter has approximately 17 dB conversion gain per channel. The maximum saturated RF output power is 15.8 dBm. Each channel dissipates 600 mW.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; array signal processing; digital control; frequency response; frequency synthesizers; microwave phase shifters; millimetre wave power amplifiers; 2 bit digitally controlled phase shifter; RF phase shifting architecture; SiGe; SiGe BiCMOS technology; conversion gain per channel; differential millimeter-wave power division network; distribution network; four channel beamforming transmitter; frequency 60 GHz; frequency synthesizer; high power amplifier; size 0.25 mum; up-conversion mixer; Array signal processing; Frequency measurement; Gain; Mixers; Phase shifters; Power amplifiers; Radio frequency; 60 GHz; beamforming; millimeter-wave; up-conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102871