Analysis of the unbalanced feeding effect on discrete device with large die size

Author

Mu, Qianli ; Bartlow, Howard ; Poulton, Matthew

Author_Institution

TriQuint Semicond., Richardson, TX, USA

fYear

2011

fDate

10-11 Oct. 2011

Firstpage

446

Lastpage

449

Abstract

This paper focuses on analyzing the unbalanced feeding effect on RF power transistors, which can be generated from the input and output transition structures when they are connected to a relatively large size die. Such an effect can cause degradation of device´s RF performance. A TGF2023-10 transistor assembled inside a PowerBand™ package is used as an example to illustrate the effect. By modeling the input and output transition structures as one-port to multi-port transition networks, parameters based on the total difference of the transmission and reflection coefficients on the multi-port side are defined to quantify the unbalanced feeding effect.

Keywords

III-V semiconductors; electromagnetic wave reflection; gallium compounds; power transistors; wide band gap semiconductors; RF power transistors; TGF2023-10 transistor; input transition structures; large die size; multi port transition networks; one port transition networks; output transition structures; reflection coefficients; transmission coefficients; unbalanced feeding effect; Degradation; FETs; Load modeling; Performance evaluation; Power generation; Radio frequency; Discrete device; Gallium Nitride; power scaling and unbalanced feeding effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2011 European

Conference_Location

Manchester

Print_ISBN

978-1-61284-236-3

Type

conf

Filename

6102877