Title :
A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
Author :
Shi, Kanjun ; Calvillo-Cortes, David A. ; De Vreede, Leo C N ; Van Rijs, Fred
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands
Abstract :
A very compact, highly efficient, 65W wideband GaN class-E power amplifier is presented. Optimum class-E loading conditions are achieved over a broad frequency range using a wideband design and implementation approach. Both input and output matching networks are implemented with bondwire inductors and MOS/MIM capacitors. The resulting amplifier operates from 1.7 to 2.3GHz with a power gain of 12.3±0.9 dB, while providing an output power of 42 to 65W with a PAE ranging from 63 to 72% (DE of 68 to 75%). The total area of the amplifier, including bias arrangements, input and output matching networks to 50Ω, is only 2-by-2 cm2.
Keywords :
III-V semiconductors; MIM devices; UHF integrated circuits; UHF power amplifiers; gallium compounds; inductors; wide band gap semiconductors; GaN; MOS-MIM capacitors; base stations; bias arrangements; bondwire inductors; class-E power amplifier; frequency 1.7 GHz to 2.3 GHz; output matching networks; power 42 W to 65 W; power 65 W; Feeds; Gallium nitride; Impedance; Impedance matching; Inductance; Inductors; Wideband; Bondwire; Gallium Nitride (GaN); class-E; power amplifiers; power transistors; wideband;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location :
Manchester
Print_ISBN :
978-1-61284-236-3
